ZnS0.8Se0.2 film for high resolution liquid crystal light valve.
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Auteurs : RBID : pubmed:14674034Abstract
The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS(0.8)Se(0.2) thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS(0.8)Se(0.2) thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS(0.8)Se(0.2) photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.
PubMed: 14674034
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">ZnS0.8Se0.2 film for high resolution liquid crystal light valve.</title><author><name sortKey="Shen, Da Ke" uniqKey="Shen D">Da-ke Shen</name><affiliation wicri:level="1"><nlm:affiliation>State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China dake.shen@gepex.ge.com</nlm:affiliation><country wicri:rule="url">Colombie</country><wicri:regionArea>State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027</wicri:regionArea></affiliation></author><author><name sortKey="Han, Gao Rong" uniqKey="Han G">Gao-rong Han</name></author><author><name sortKey="Du, Pi Yi" uniqKey="Du P">Pi-yi Du</name></author><author><name sortKey="Que, Duan Lin" uniqKey="Que D">Duan-lin Que</name></author><author><name sortKey="Sou, I K" uniqKey="Sou I">I K Sou</name></author></titleStmt><publicationStmt><date when="2004">2004</date><idno type="RBID">pubmed:14674034</idno><idno type="pmid">14674034</idno><idno type="wicri:Area/Main/Corpus">003326</idno><idno type="wicri:Area/Main/Curation">003326</idno><idno type="wicri:Area/Main/Exploration">002E92</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS(0.8)Se(0.2) thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS(0.8)Se(0.2) thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS(0.8)Se(0.2) photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">14674034</PMID><DateCreated><Year>2003</Year><Month>12</Month><Day>15</Day></DateCreated><DateCompleted><Year>2004</Year><Month>08</Month><Day>23</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Print">1009-3095</ISSN><JournalIssue CitedMedium="Print"><Volume>5</Volume><Issue>2</Issue><PubDate><Year>2004</Year><Month>Feb</Month></PubDate></JournalIssue><Title>Journal of Zhejiang University. Science</Title><ISOAbbreviation>J. Zhejiang Univ. Sci.</ISOAbbreviation></Journal><ArticleTitle>ZnS0.8Se0.2 film for high resolution liquid crystal light valve.</ArticleTitle><Pagination><MedlinePgn>212-7</MedlinePgn></Pagination><Abstract><AbstractText>The structural characteristics and optical and electrical properties of molecular-beam-epitaxy (MBE) grown ZnS(0.8)Se(0.2) thin films on indium-tin-oxide (ITO) glass substrates were investigated in this work. The X-ray diffraction (XRD) results indicated that high quality polycrystalline ZnS(0.8)Se(0.2) thin film grown at the optimized temperature had a preferred orientation along the (111) planes. The transmission electron microscopy (TEM) cross-sectional micrograph of the sample showed a well defined columnar structure with lateral crystal dimension in the order of a few hundred angstroms. Ultraviolet (UV) photoresponsivity as high as 0.01 A/W had been demonstrated and for wavelengths longer than 450 nm, the response was down from the peak response by more than 3 orders of magnitude. The thin ZnS(0.8)Se(0.2) photosensor layer, with a wide energy gap and anisotropic electrical property, makes a transmission UV liquid crystal light valve (LCLV) with high resolution feasible.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Shen</LastName><ForeName>Da-ke</ForeName><Initials>DK</Initials><Affiliation>State Key Laboratory of Silicon Material Science, Zhejiang University, Hangzhou 310027, China dake.shen@gepex.ge.com</Affiliation></Author><Author ValidYN="Y"><LastName>Han</LastName><ForeName>Gao-rong</ForeName><Initials>GR</Initials></Author><Author ValidYN="Y"><LastName>Du</LastName><ForeName>Pi-yi</ForeName><Initials>PY</Initials></Author><Author ValidYN="Y"><LastName>Que</LastName><ForeName>Duan-lin</ForeName><Initials>DL</Initials></Author><Author ValidYN="Y"><LastName>Sou</LastName><ForeName>I K</ForeName><Initials>IK</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>China</Country><MedlineTA>J Zhejiang Univ Sci</MedlineTA><NlmUniqueID>100954270</NlmUniqueID><ISSNLinking>1009-3095</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="pubmed"><Year>2003</Year><Month>12</Month><Day>16</Day><Hour>5</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2003</Year><Month>12</Month><Day>16</Day><Hour>5</Hour><Minute>1</Minute></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2003</Year><Month>12</Month><Day>16</Day><Hour>5</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pubmed">14674034</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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